SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK
(PD,PE,KK)
110F
THYRISTOR MODULE
UL:E76102
M
80
0.2
M5X10
2.8
110TAB
92
20
25
12.5
12
20
20
2- 6
17.5
3.5
3.5
7.5
G
2
K
2
G
1
K
1
6.5
19.5
31max
29max
#
Unit
A
Symbol
Item
Conditions
Ratings
110
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Curren
Single phase, half wave, 180
conduction, Tc88
Single phase, half wave, 180
conduction, Tc88
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage(Forward)
1
2
cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
A
172
A
2300/2550
A
26500
10
A
2
S
W
3
V
RGM
Peak Gate Voltage(Reverse)
di
dt
Critical Rate of Rise of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
V
ISO
Isolation Breakdown Voltage (R.M.S.)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M5
Terminal
M5
A.C.1minute
Recommended 1.5-2.5
15-25
Recommended 1.5-2.5
15-25
3
W
A
10
V
5
V
200
A/
s
2500
V
-40 to 125
-40 to 125
2.7
28
2.7
28
170
N
fB
g
Symbol
Item
Conditions
Ratings
20
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, single phase, half wave, Tj
125
at V
DRM
, single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv
dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 350A, Tj
25 Inst. measurement
Tj
25I
T
1AV
D
6V
mA
20
mA
1.45
V
100/3
Tj
125V
D
1/2V
DRM
I
T
110AI
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
0.25
mA/V
V
10
Tj
125, V
D
2
3
V
DRM
, Exponential wave.
Tj
25
I
L
Lutching Current, typ.
Rth
j-cThermal Impedance, max.
Tj
25
Junction to case
500
s
V/
s
50
mA
100
mA
0.25
/W
Electrical Characteristics
Maximum Ratings
Symbol
Item
PK110F40
PD110F40
PE110F40
KK110F40
PK110F80
PD110F80
PE110F80
KK110F80
Ratings
PK110F120
PD110F120
PE110F120
KK110F120
PK110F160
PD110F160
PE110F160
KK110F160
Unit
V
RRM
Repetitive Peak Reverse Voltage
400
800
1200
1600
V
480
960
1300
1700
V
400
800
1200
1600
V
V
RSM
V
DRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
markThyristor and Diode part. No markThyristor part
Power Thyristor/Diode Module PK110F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
I
T(AV)
110A, I
T(RMS)
172A, I
TSM
2550A
di/dt 200 A/
s
dv/dt 500V/
s
Applications
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
K1
A2
K2
A1K2
G1
K2
G2
1
2
3
PK
K1
A2
K2
A1K2
K2
G2
1
2
3
PE
K1
A2
K2
A1K2
G1
K2
1
2
3
PD
K1
A2
A1
G1
K2
G2
1
2
1
KK
PK(PD,PE,KK)110F
;
;
-
Peak Forward Gate Voltage10V
Peak Gate
Power
10W
Average Gate
Power
3
W
Maximum Gate Voltage that will not trigger any unit
Peak Gate Current
3
A
125 25
-30
Gate Characteristics
Gate CurrentmA
Gate Voltage
V
4
On-State VoltageV
On-State Voltage max
On-State Current
A
: Conduction Angle
360
2
Per one element
D.C.
180
120
90
60
30
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Power Dissipation
W
: Conduction Angle
360
2
1
D.C.
Per one element
180
120
90
60
30
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-State CurrentA
Allowable Case Temperature
0
2
= start
Per one element
60Hz
50Hz
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
-
-
-
Per one element
Junction to case
Transient Thermal Impedance
Time
t
sec
Transient Thermal Impedance
j-c
/
W
Rth:1.0/W
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
Conduction Angle 180
W3
B6
B2
W1
Output Current
WBidirectional connection
Output CurrentA
Ambient Temperature
Total Power Dissipation
W
IdAr.m.s.
Rth:1.0/W
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
Rth:1.0/W
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
BTwo Pluse bridge connection
Ambient Temperature
Ambient Temperature
BSix pulse bridge connection
Three phase
bidiretional connection
Allowable Case Temperature
IdAav.
IdAav.
IdAr.m.s.
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